Browsing by Author Hwang, Hyunsang
Showing results 5 to 24 of 25
Coexistence of filamentary and homogeneous resistive switching in graded WOx thin films
Author(s) | Biju, Kuyyadi P.; Liu, Xinjun; Kim, Seonghyun, et al |
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Type | Journal article |
Date Published | 2011 |
Date Created | - |
Complementary resistive switching in niobium oxide-based resistive memory devices
Author(s) | Liu, Xinjun; Sadaf, Sharif Md.; Park, Sangsu, et al |
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Type | Journal article |
Date Published | 2013 |
Date Created | - |
Diode-less bilayer oxide (WOx-NbOx) device for cross-point resistive memory applications
Author(s) | Liu, Xinjun; Sadaf, Sharif Md.; Son, Myungwoo, et al |
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Type | Journal article |
Date Published | 2011 |
Date Created | - |
Ferroelectric polarization effect on Al-Nb codoped Pb(Zr 0.52Ti0.48)O3/Pr0.7Ca0.3MnO3 heterostructure resistive memory
Author(s) | Bourim, El Mostafa; Park, Sangsoo; Liu, Xinjun, et al |
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Type | Journal article |
Date Published | 2011 |
Date Created | - |
Ferroelectricity-induced resistive switching in Pb(Zr 0.52Ti0.48)O3/Pr0.7Ca 0.3MnO3/Nb-doped SrTiO3 epitaxial heterostructure
Author(s) | Sadaf, Sharif Md.; Bourim, El Mostafa; Liu, Xinjun, et al |
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Type | Journal article |
Date Published | 2012 |
Date Created | - |
Filament-type resistive switching in homogeneous Bi-layer Pr0.7Ca0.3MnO3 thin film memory devices
Author(s) | Liu, Xinjun; Biju, Kuyyadi P.; Bourim, El Mostafa, et al |
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Type | Journal article |
Date Published | 2011 |
Date Created | - |
Highly asymmetric bipolar resistive switching in solution-processed Pt/TiO2/W devices for cross-point application
Author(s) | Biju, Kuyyadi P.; Liu, Xinjun; Shin, Jungho, et al |
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Type | Journal article |
Date Published | 2011 |
Date Created | - |
Highly uniform and reliable resistance switching properties in bilayer WO x/NbO x RRAM devices
Author(s) | Sadaf, Sharif Md.; Liu, Xinjun; Son, Myungwoo, et al |
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Type | Journal article |
Date Published | 2012 |
Date Created | - |
Improved resistive switching properties in Pt/Pr0.7Ca 0.3MnO3/Y2O3-stabilized ZrO 2/W via-hole structures
Author(s) | Liu, Xinjun; Biju, Kuyyadi P.; Park, Sangsu, et al |
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Type | Journal article |
Date Published | 2011 |
Date Created | - |
Improved resistive switching properties of solution processed ti O 2 thin films
Author(s) | Biju, Kuyyadi P.; Liu, Xinjun; Bourim, El Mostafa, et al |
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Type | Journal article |
Date Published | 2010 |
Date Created | - |
Improved resistive switching properties of solution-processed TiOx film by incorporating atomic layer deposited TiO2 layer
Author(s) | Kim, Insung; Jung, Seungjae; Shin, Jungho, et al |
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Type | Journal article |
Date Published | 2011 |
Date Created | - |
Improvement of resistive switching uniformity by introducing a thin NbOx interface layer
Author(s) | Liu, Xinjun; Sadaf, Sharif Md.; Kim, Seonghyun, et al |
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Type | Journal article |
Date Published | 2012 |
Date Created | - |
Low programming voltage resistive switching in reactive metal/polycrystalline Pr0.7Ca0.3MnO3 devices
Author(s) | Liu, Xinjun; Biju, Kuyyadi P.; Bourim, El Mostafa, et al |
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Type | Journal article |
Date Published | 2010 |
Date Created | - |
Low-power and controllable memory window in Pt/Pr 0.7Ca 0.3MnO 3/yttria-stabilized zirconia/w resistive random-access memory devices
Author(s) | Liu, Xinjun; Biju, Kuyyadi P.; Park, Jubong, et al |
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Type | Journal article |
Date Published | 2012 |
Date Created | - |
Memristive switching behavior in Pr0.7Ca0.3MnO3 by incorporating an oxygen-deficient layer
Author(s) | Park, Sangsu; Jung, Seungjae; Siddik, Manzar, et al |
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Type | Journal article |
Date Published | 2011 |
Date Created | - |
Parallel memristive filaments model applicable to bipolar and filamentary resistive switching
Author(s) | Liu, Xinjun; Biju, Kuyyadi P.; Lee, Joonmyoung, et al |
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Type | Journal article |
Date Published | 2011 |
Date Created | - |
Resistive switching characteristics and mechanism of thermally grown WOx thin films
Author(s) | Biju, Kuyyadi P.; Liu, Xinjun; Siddik, Manzar, et al |
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Type | Journal article |
Date Published | 2011 |
Date Created | - |
Resistive switching mechanism of a Pr0.7Ca0.3MnO3-based memory device and assessment of its suitability for nano-scale applications
Author(s) | Liu, Xinjun; Kim, Insung; Siddik, Manzar, et al |
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Type | Journal article |
Date Published | 2011 |
Date Created | - |
Self-selective characteristics of nanoscale VOx devices for high-density ReRAM applications
Author(s) | Son, Myungwoo; Liu, Xinjun; Sadaf, Sharif Md., et al |
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Type | Journal article |
Date Published | 2012 |
Date Created | - |
Thermally-assisted Ti/Pr0.7Ca0.3MnO3 ReRAM with excellent switching speed and retention characteristics
Author(s) | Jung, Seungjae; Siddik, Manzar; Lee, Wootae, et al |
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Type | Conference paper |
Date Published | 2011 |
Date Created | December 5-7 2011 |
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