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Filament-type resistive switching in homogeneous Bi-layer Pr0.7Ca0.3MnO3 thin film memory devices

Liu, Xinjun; Biju, Kuyyadi P.; Bourim, El Mostafa; Park, Sangsu; Lee, Wootae; Lee, Daeseok; Seo, Kyungah; Hwang, Hyunsang


It is known that Pt/ Pr0.7 Ca0.3 Mn O3 (PCMO)/Pt structures show no hysteresis loops in current-voltage curves due to the symmetric top and bottom interfaces. Here, we prepared an asymmetric memory device using bi-layer PCMO thin films with different oxygen content. The repeatable and stable resistive switching is observed. The excellent resistive switching characteristics such as a large RHRS / RLRS (where HRS is the high resistance state and LRS is the low resistance state) ratio (∼1000),...[Show more]

CollectionsANU Research Publications
Date published: 2011
Type: Journal article
Source: Electrochemical and Solid-State Letters
DOI: 10.1149/1.3505098


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