Skip navigation
Skip navigation

Filament-type resistive switching in homogeneous Bi-layer Pr0.7Ca0.3MnO3 thin film memory devices

Liu, Xinjun; Biju, Kuyyadi P.; Bourim, El Mostafa; Park, Sangsu; Lee, Wootae; Lee, Daeseok; Seo, Kyungah; Hwang, Hyunsang

Description

It is known that Pt/ Pr0.7 Ca0.3 Mn O3 (PCMO)/Pt structures show no hysteresis loops in current-voltage curves due to the symmetric top and bottom interfaces. Here, we prepared an asymmetric memory device using bi-layer PCMO thin films with different oxygen content. The repeatable and stable resistive switching is observed. The excellent resistive switching characteristics such as a large RHRS / RLRS (where HRS is the high resistance state and LRS is the low resistance state) ratio (∼1000),...[Show more]

CollectionsANU Research Publications
Date published: 2011
Type: Journal article
URI: http://hdl.handle.net/1885/65504
Source: Electrochemical and Solid-State Letters
DOI: 10.1149/1.3505098

Download

File Description SizeFormat Image
01_Liu_Filament-type_resistive_2011.pdf650.41 kBAdobe PDF    Request a copy


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  20 July 2017/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator