Improved resistive switching properties in Pt/Pr0.7Ca 0.3MnO3/Y2O3-stabilized ZrO 2/W via-hole structures
Date
2011
Authors
Liu, Xinjun
Biju, Kuyyadi P.
Park, Sangsu
Kim, Insung
Siddik, Manzar
Sadaf, Sharif Md.
Hwang, Hyunsang
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier
Abstract
An yttria-stabilized zirconia (YSZ) (∼10 nm) layer was designed and introduced by a pulse laser deposition method before a Pr0.7Ca0.3MnO3 (PCMO) film was deposited on the W bottom electrode (BE) with a sub-micron via-hole structure. Comparing Pt/PCMO/W
Description
Keywords
Keywords: Bottom electrodes; Low-power consumption; Oxygen ions; Pulse laser deposition; Pulse measurements; ReRAM; Resistive switching; Submicron; Tunneling barrier; Via-hole; DC power transmission; Manganese oxide; Switching systems; Zirconia; Structural properti Manganites thin film; ReRAM; Resistive switching; Tunneling barrier
Citation
Collections
Source
Current Applied Physics
Type
Journal article