Improved resistive switching properties in Pt/Pr0.7Ca 0.3MnO3/Y2O3-stabilized ZrO 2/W via-hole structures

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dc.contributor.authorLiu, Xinjun
dc.contributor.authorBiju, Kuyyadi P.
dc.contributor.authorPark, Sangsu
dc.contributor.authorKim, Insung
dc.contributor.authorSiddik, Manzar
dc.contributor.authorSadaf, Sharif Md.
dc.contributor.authorHwang, Hyunsang
dc.date.accessioned2015-12-10T23:18:13Z
dc.date.available2015-12-10T23:18:13Z
dc.date.issued2011
dc.date.updated2016-02-24T09:57:13Z
dc.description.abstractAn yttria-stabilized zirconia (YSZ) (∼10 nm) layer was designed and introduced by a pulse laser deposition method before a Pr0.7Ca0.3MnO3 (PCMO) film was deposited on the W bottom electrode (BE) with a sub-micron via-hole structure. Comparing Pt/PCMO/W
dc.identifier.issn1567-1739
dc.identifier.urihttp://hdl.handle.net/1885/65528
dc.publisherElsevier
dc.sourceCurrent Applied Physics
dc.subjectKeywords: Bottom electrodes; Low-power consumption; Oxygen ions; Pulse laser deposition; Pulse measurements; ReRAM; Resistive switching; Submicron; Tunneling barrier; Via-hole; DC power transmission; Manganese oxide; Switching systems; Zirconia; Structural properti Manganites thin film; ReRAM; Resistive switching; Tunneling barrier
dc.titleImproved resistive switching properties in Pt/Pr0.7Ca 0.3MnO3/Y2O3-stabilized ZrO 2/W via-hole structures
dc.typeJournal article
local.bibliographicCitation.issue2 SUPPL.
local.bibliographicCitation.lastpagee61
local.bibliographicCitation.startpagee58
local.contributor.affiliationLiu, Xinjun, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationBiju, Kuyyadi P., Gwangju Institute of Science and Technology
local.contributor.affiliationPark, Sangsu, Gwangju Institute of Science and Technology
local.contributor.affiliationKim, Insung, Gwangju Institute of Science and Technology
local.contributor.affiliationSiddik, Manzar, Gwangju Institute of Science and Technology
local.contributor.affiliationSadaf, Sharif Md., Gwangju Institute of Science and Technology
local.contributor.affiliationHwang, Hyunsang, Gwangju Institute of Science and Technology
local.contributor.authoremailu5361480@anu.edu.au
local.contributor.authoruidLiu, Xinjun, u5361480
local.description.notesImported from ARIES
local.identifier.absfor100705 - Nanoelectronics
local.identifier.absfor090604 - Microelectronics and Integrated Circuits
local.identifier.absfor091205 - Functional Materials
local.identifier.ariespublicationU3488905xPUB1119
local.identifier.citationvolume11
local.identifier.doi10.1016/j.cap.2010.11.123
local.identifier.scopusID2-s2.0-79960899808
local.identifier.thomsonID000294208600013
local.identifier.uidSubmittedByU3488905
local.type.statusPublished Version

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