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Improved resistive switching properties in Pt/Pr0.7Ca 0.3MnO3/Y2O3-stabilized ZrO 2/W via-hole structures

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Date

2011

Authors

Liu, Xinjun
Biju, Kuyyadi P.
Park, Sangsu
Kim, Insung
Siddik, Manzar
Sadaf, Sharif Md.
Hwang, Hyunsang

Journal Title

Journal ISSN

Volume Title

Publisher

Elsevier

Abstract

An yttria-stabilized zirconia (YSZ) (∼10 nm) layer was designed and introduced by a pulse laser deposition method before a Pr0.7Ca0.3MnO3 (PCMO) film was deposited on the W bottom electrode (BE) with a sub-micron via-hole structure. Comparing Pt/PCMO/W

Description

Keywords

Keywords: Bottom electrodes; Low-power consumption; Oxygen ions; Pulse laser deposition; Pulse measurements; ReRAM; Resistive switching; Submicron; Tunneling barrier; Via-hole; DC power transmission; Manganese oxide; Switching systems; Zirconia; Structural properti Manganites thin film; ReRAM; Resistive switching; Tunneling barrier

Citation

URI

http://hdl.handle.net/1885/65528

Collections

ANU Research Publications

Source

Current Applied Physics

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1016/j.cap.2010.11.123

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