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Ferroelectricity-induced resistive switching in Pb(Zr 0.52Ti0.48)O3/Pr0.7Ca 0.3MnO3/Nb-doped SrTiO3 epitaxial heterostructure

Sadaf, Sharif Md.; Bourim, El Mostafa; Liu, Xinjun; Choudhury, Sakeb; Kim, Dong-Wook; Hwang, Hyunsang

Description

We investigated the effect of a ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) thin film on the generation of resistive switching in a stacked Pr0.7Ca0.3MnO3 (PCMO)/Nb-doped SrTiO3 (Nb:STO) heterostructure forming a p-n junction. To promote the ferroelectric effect, the thin PZT active layer was deposited on an epitaxially grown p-type PCMO film on a lattice-matched n-type Nb:STO single crystal. It was concluded that the observed resistive switching behavior in the all-perovskite Pt/PZT/PCMO/Nb:STO...[Show more]

CollectionsANU Research Publications
Date published: 2012
Type: Journal article
URI: http://hdl.handle.net/1885/65455
Source: Applied Physics Letters
DOI: 10.1063/1.3694016

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