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Memristive switching behavior in Pr0.7Ca0.3MnO3 by incorporating an oxygen-deficient layer

Park, Sangsu; Jung, Seungjae; Siddik, Manzar; Jo, Minseok; Lee, Joonmyoung; Park, Jubong; Lee, Wootae; Kim, Seonghyun; Sadaf, Sharif Md.; Liu, Xinjun; Hwang, Hyunsang

Description

We propose a homogeneous nanoscaled (∅ 250 nm) bilayered Pr0.7Ca0.3MnO3 (PCMO)-based memory device that exhibits low power and good memristive switching behavior. Accurate control of the oxygen-deficient (PCMO3-x) layer thickness promotes oxygen migrati

CollectionsANU Research Publications
Date published: 2011
Type: Journal article
URI: http://hdl.handle.net/1885/65576
Source: Physica Status Solidi: Rapid Research Letters
DOI: 10.1002/pssr.201105317

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