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Improvement of resistive switching uniformity by introducing a thin NbOx interface layer

Liu, Xinjun; Sadaf, Sharif Md.; Kim, Seonghyun; Biju, Kuyyadi P.; Cao, Xun; Son, Myungwoo; Choudhury, Sakeb; Jung, Gun-Young; Hwang, Hyunsang

Description

Uniformity is by far an important issue for the application of resistive random access memory (RRAM). In this letter, we explore a prototype RRAM device for switching uniformity improvement. Compared to W/WO3-x/Pt structure, after the introduction of a thin NbOx film between WO 3-x and Pt bottom electrode, the device exhibits much better resistive hysteresis and switching uniformity. The main composition of the interface layer is NbO2 suboxide showing insulator-metal phase transition. A...[Show more]

CollectionsANU Research Publications
Date published: 2012
Type: Journal article
URI: http://hdl.handle.net/1885/65487
Source: ECS Solid State Letters
DOI: 10.1149/2.004205ssl

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