Diode-less bilayer oxide (WOx-NbOx) device for cross-point resistive memory applications
The combination of a threshold switching device and a resistive switching (RS) device was proposed to suppress the undesired sneak current for the integration of bipolar RS cells in a cross-point array type memory. A simulation for this hybrid-type device shows that the matching of key parameters between switch element and memory element is an important issue. Based on the threshold switching oxides, a conceptual structure with a simple metal-oxide1-oxide2-metal stack was provided to...[Show more]
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