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Diode-less bilayer oxide (WOx-NbOx) device for cross-point resistive memory applications

Liu, Xinjun; Sadaf, Sharif Md.; Son, Myungwoo; Shin, Jungho; Park, Jubong; Lee, Joonmyoung; Park, Sangsu; Hwang, Hyunsang

Description

The combination of a threshold switching device and a resistive switching (RS) device was proposed to suppress the undesired sneak current for the integration of bipolar RS cells in a cross-point array type memory. A simulation for this hybrid-type device shows that the matching of key parameters between switch element and memory element is an important issue. Based on the threshold switching oxides, a conceptual structure with a simple metal-oxide1-oxide2-metal stack was provided to...[Show more]

CollectionsANU Research Publications
Date published: 2011
Type: Journal article
URI: http://hdl.handle.net/1885/65581
Source: Nanotechnology
DOI: 10.1088/0957-4484/22/47/475702

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