Highly uniform and reliable resistance switching properties in bilayer WO x/NbO x RRAM devices
Memory performances, especially uniformity and reliability of resistance random access memory (RRAM) devices with W/NbOx/Pt structures were investigated. Scaling down the active device area (φ = 250 nm) can significantly minimize extrinsic defects relate
|Collections||ANU Research Publications|
|Source:||Physica Status Solidi A|
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