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Highly uniform and reliable resistance switching properties in bilayer WO x/NbO x RRAM devices

Sadaf, Sharif Md.; Liu, Xinjun; Son, Myungwoo; Park, Sangsu; Choudhury, Sakeb; Cha, Euijun; Siddik, Manzar; Shin, Jungho; Hwang, Hyunsang

Description

Memory performances, especially uniformity and reliability of resistance random access memory (RRAM) devices with W/NbOx/Pt structures were investigated. Scaling down the active device area (φ = 250 nm) can significantly minimize extrinsic defects relate

CollectionsANU Research Publications
Date published: 2012
Type: Journal article
URI: http://hdl.handle.net/1885/65469
Source: Physica Status Solidi A
DOI: 10.1002/pssa.201127659

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