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Complementary resistive switching in niobium oxide-based resistive memory devices

Liu, Xinjun; Sadaf, Sharif Md.; Park, Sangsu; Kim, Seonghyun; Cha, Euijun; Lee, Daeseok; Jung, Gun-Young; Hwang, Hyunsang


For the applications of resistive random access memory (RRAM), we study the complementary resistive switch (CRS) behavior of a bilayer Nb2O 5-x/NbOy RRAM. The CRS effect is explained by the redistribution of oxygen vacancies inside the two niobium oxide layers. Improved CRS effects were observed using W top electrode (TE) instead of Pt, which can be attributed to the oxygen barrier layer derived from a self-formed WO x layer between the W TE and the Nb2 O5-x oxide film. The niobium oxide-based...[Show more]

CollectionsANU Research Publications
Date published: 2013
Type: Journal article
Source: IEEE Electron Device Letters
DOI: 10.1109/LED.2012.2235816


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