Liu, Xinjun; Biju, Kuyyadi P.; Lee, Joonmyoung; Park, Jubong; Kim, Seonghyun; Park, Sangsu; Shin, Jungho; Sadaf, Sharif Md.; Hwang, Hyunsang
The concept of memristive filaments (MFs) is introduced, which is based on the memristors developed by the Hewlett-Packard group. The effects of key parameters on electrical properties are elucidated. The current-voltage features of bipolar and filamentary resistive switching are reproduced by using a parallel MF model with dynamic growth and rupture of multiple MFs. This model can be extended and adapted to most nanosized transition metal oxide memristors.
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