Parallel memristive filaments model applicable to bipolar and filamentary resistive switching
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Liu, Xinjun; Biju, Kuyyadi P.; Lee, Joonmyoung; Park, Jubong; Kim, Seonghyun; Park, Sangsu; Shin, Jungho; Sadaf, Sharif Md.; Hwang, Hyunsang
Description
The concept of memristive filaments (MFs) is introduced, which is based on the memristors developed by the Hewlett-Packard group. The effects of key parameters on electrical properties are elucidated. The current-voltage features of bipolar and filamentary resistive switching are reproduced by using a parallel MF model with dynamic growth and rupture of multiple MFs. This model can be extended and adapted to most nanosized transition metal oxide memristors.
Collections | ANU Research Publications |
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Date published: | 2011 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/65556 |
Source: | Applied Physics Letters |
DOI: | 10.1063/1.3638486 |
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01_Liu_Parallel_memristive_filaments_2011.pdf | 1.22 MB | Adobe PDF | Request a copy |
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