Skip navigation
Skip navigation

Self-selective characteristics of nanoscale VOx devices for high-density ReRAM applications

Son, Myungwoo; Liu, Xinjun; Sadaf, Sharif Md.; Lee, Daeseok; Park, Sangsu; Lee, Wootae; Kim, Seonghyun; Park, Jubong; Shin, Jungho; Jung, Seungjae; Ham, Moon-Ho; Hwang, Hyunsang

Description

We herein present a hybrid-type memory device in which threshold switching and bipolar resistive switching are combined. The nanoscale vanadium oxide (VOx) device simultaneously exhibited self-selective performance and memory switching by electroforming.

CollectionsANU Research Publications
Date published: 2012
Type: Journal article
URI: http://hdl.handle.net/1885/65462
Source: IEEE Electron Device Letters
DOI: 10.1109/LED.2012.2188989

Download

File Description SizeFormat Image
01_Son_Self-selective_characteristics_2012.pdf501.11 kBAdobe PDF    Request a copy


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  20 July 2017/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator