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Self-selective characteristics of nanoscale VOx devices for high-density ReRAM applications

Son, Myungwoo; Liu, Xinjun; Sadaf, Sharif Md.; Lee, Daeseok; Park, Sangsu; Lee, Wootae; Kim, Seonghyun; Park, Jubong; Shin, Jungho; Jung, Seungjae; Ham, Moon-Ho; Hwang, Hyunsang


We herein present a hybrid-type memory device in which threshold switching and bipolar resistive switching are combined. The nanoscale vanadium oxide (VOx) device simultaneously exhibited self-selective performance and memory switching by electroforming.

CollectionsANU Research Publications
Date published: 2012
Type: Journal article
Source: IEEE Electron Device Letters
DOI: 10.1109/LED.2012.2188989


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