Liu, Xinjun; Kim, Insung; Siddik, Manzar; Sadaf, Sharif Md.; Biju, Kuyyadi P.; Park, Sangsu; Hwang, Hyunsang
In this work, various nano-scale Pr0.7Ca0.3MnO3(PCMO)-based memory devices with electrode diameters of 250 nm were fabricated, and the effect of the metal electrode/PCMO interface on resistive switching (RS) for PCMO-based resistive random access memories, is systematically investigated. The switching behavior could be improved not only by using a reactive metal (W and Al) but also by inserting a thin oxide tunnel barrier layer (yttria-stabilized zirconia, i.e., YSZ) or a dielectric Al2O3 layer...[Show more]
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.