Resistive switching mechanism of a Pr0.7Ca0.3MnO3-based memory device and assessment of its suitability for nano-scale applications
In this work, various nano-scale Pr0.7Ca0.3MnO3(PCMO)-based memory devices with electrode diameters of 250 nm were fabricated, and the effect of the metal electrode/PCMO interface on resistive switching (RS) for PCMO-based resistive random access memories, is systematically investigated. The switching behavior could be improved not only by using a reactive metal (W and Al) but also by inserting a thin oxide tunnel barrier layer (yttria-stabilized zirconia, i.e., YSZ) or a dielectric Al2O3 layer...[Show more]
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|Source:||Journal of the Korean Physical Society|
|01_Liu_Resistive_switching_mechanism_2011.pdf||585.74 kB||Adobe PDF||Request a copy|
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