Coexistence of filamentary and homogeneous resistive switching in graded WOx thin films
Biju, Kuyyadi P.; Liu, Xinjun; Kim, Seonghyun; Jung, Seungjae; Park, Jubong; Hwang, Hyunsang
Reversible clockwise and counter-clockwise resistive switching in a Pt/graded WOx /W stack is reported. Two stable switching modes with opposite switching polarity and different electrical characteristics are found to coexist in the same memory cell. Clockwise switching shows filamentary characteristics that lead to relatively faster switching with excellent retention at high temperature. Counter-clockwise switching exhibits homogeneous conduction with slower switching and moderate retention....[Show more]
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|Source:||Physica Status Solidi: Rapid Research Letters|
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