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Improved resistive switching properties of solution-processed TiOx film by incorporating atomic layer deposited TiO2 layer

Kim, Insung; Jung, Seungjae; Shin, Jungho; Biju, Kuyyadi P.; Seo, Kyungah; Siddik, Manzar; Kong, Jaemin; Liu, Xinjun; Lee, Kwanghee; Hwang, Hyunsang

Description

Resistive switching characteristics of bilayered titanium oxides layer were investigated. To improve the relatively poor electrical characteristics of solution-processed TiOx active layers, we incorporated an additional thin TiO2 (∼8 nm) layer by atomic

CollectionsANU Research Publications
Date published: 2011
Type: Journal article
URI: http://hdl.handle.net/1885/65514
Source: Japanese Journal of Applied Physics
DOI: 10.1143/JJAP.50.046504

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