Improved resistive switching properties of solution-processed TiOx film by incorporating atomic layer deposited TiO2 layer
Resistive switching characteristics of bilayered titanium oxides layer were investigated. To improve the relatively poor electrical characteristics of solution-processed TiOx active layers, we incorporated an additional thin TiO2 (∼8 nm) layer by atomic
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|Source:||Japanese Journal of Applied Physics|
|01_Kim_Improved_resistive_switching_2011.pdf||615.96 kB||Adobe PDF||Request a copy|
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