Low programming voltage resistive switching in reactive metal/polycrystalline Pr0.7Ca0.3MnO3 devices
The resistive switching (RS) characteristics of PtPr0.7Ca 0.3MnO3 (PCMO)/W devices with a submicron via-hole structure are investigated. Reproducible and stable switching behavior was achieved in voltage sweeping cycles, while the resistance change was more than two orders of magnitude. No forming process was required to induce the RS. Detailed current densityvoltage analysis suggest that the oxidation and reduction reaction of an interfacial WOx layer by electrochemical migration of oxygen...[Show more]
|Collections||ANU Research Publications|
|Source:||Solid State Communications|
|01_Liu_Low_programming_voltage_2010.pdf||622.33 kB||Adobe PDF||Request a copy|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.