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Low programming voltage resistive switching in reactive metal/polycrystalline Pr0.7Ca0.3MnO3 devices

Liu, Xinjun; Biju, Kuyyadi P.; Bourim, El Mostafa; Park, Sangsu; Lee, Wootae; Shin, Jungho; Hwang, Hyunsang


The resistive switching (RS) characteristics of PtPr0.7Ca 0.3MnO3 (PCMO)/W devices with a submicron via-hole structure are investigated. Reproducible and stable switching behavior was achieved in voltage sweeping cycles, while the resistance change was more than two orders of magnitude. No forming process was required to induce the RS. Detailed current densityvoltage analysis suggest that the oxidation and reduction reaction of an interfacial WOx layer by electrochemical migration of oxygen...[Show more]

CollectionsANU Research Publications
Date published: 2010
Type: Journal article
Source: Solid State Communications
DOI: 10.1016/j.ssc.2010.09.036


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