Highly asymmetric bipolar resistive switching in solution-processed Pt/TiO2/W devices for cross-point application
Resistive switching characteristics of Pt/TiO2/W devices are investigated. TiO2 thin films are grown by a sol-gel spin-coating technique. The crystal structure and chemical bonding states of the TiO2 films are investigated by X-ray diffraction and X-ray photoelectron spectroscopy. The device exhibits reversible and reproducible bistable resistive switching with a rectifying effect. The Schottky contact at the Pt/TiO2 interface limits electron injection under reverse bias and results in a...[Show more]
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|Source:||Current Applied Physics|
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