Skip navigation
Skip navigation

Highly asymmetric bipolar resistive switching in solution-processed Pt/TiO2/W devices for cross-point application

Biju, Kuyyadi P.; Liu, Xinjun; Shin, Jungho; Kim, Insung; Jung, Seungjae; Siddik, Manzar; Lee, Joonmyoung; Ignatiev, Alex; Hwang, Hyunsang


Resistive switching characteristics of Pt/TiO2/W devices are investigated. TiO2 thin films are grown by a sol-gel spin-coating technique. The crystal structure and chemical bonding states of the TiO2 films are investigated by X-ray diffraction and X-ray photoelectron spectroscopy. The device exhibits reversible and reproducible bistable resistive switching with a rectifying effect. The Schottky contact at the Pt/TiO2 interface limits electron injection under reverse bias and results in a...[Show more]

CollectionsANU Research Publications
Date published: 2011
Type: Journal article
Source: Current Applied Physics
DOI: 10.1016/j.cap.2011.07.018


File Description SizeFormat Image
01_Biju_Highly_asymmetric_bipolar_2011.pdf920.94 kBAdobe PDF    Request a copy

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator