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Low-power and controllable memory window in Pt/Pr 0.7Ca 0.3MnO 3/yttria-stabilized zirconia/w resistive random-access memory devices

Liu, Xinjun; Biju, Kuyyadi P.; Park, Jubong; Park, Sangsu; Shin, Jungho; Kim, Insung; Sadaf, Sharif Md.; Hwang, Hyunsang

Description

Yttria-stabilized zirconia (YSZ) layers of various thicknesses were designed and introduced before Pr0.7Ca0.3MnO3 (PCMO) film was deposited on W bottom electrodes with a submicron via-hole structure. By changing the thickness of the YSZ barrier layer (3,5,9, and 13 nm), a tunable memory window can be realized while low power consumption (Pmax < 4 μW) is maintained. Resistive switching (RS) in a Pt/PCMO/YSZ/W stack with a thin YSZ layer can be ascribed to an oxidation/reduction reaction caused...[Show more]

CollectionsANU Research Publications
Date published: 2012
Type: Journal article
URI: http://hdl.handle.net/1885/65819
Source: Journal of Nanoscience and Nanotechnology
DOI: 10.1166/jnn.2012.5606

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