Low-power and controllable memory window in Pt/Pr 0.7Ca 0.3MnO 3/yttria-stabilized zirconia/w resistive random-access memory devices
Yttria-stabilized zirconia (YSZ) layers of various thicknesses were designed and introduced before Pr0.7Ca0.3MnO3 (PCMO) film was deposited on W bottom electrodes with a submicron via-hole structure. By changing the thickness of the YSZ barrier layer (3,5,9, and 13 nm), a tunable memory window can be realized while low power consumption (Pmax < 4 μW) is maintained. Resistive switching (RS) in a Pt/PCMO/YSZ/W stack with a thin YSZ layer can be ascribed to an oxidation/reduction reaction caused...[Show more]
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|Source:||Journal of Nanoscience and Nanotechnology|
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