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Resistive switching characteristics and mechanism of thermally grown WOx thin films

Biju, Kuyyadi P.; Liu, Xinjun; Siddik, Manzar; Kim, Seonghyun; Shin, Jungho; Kim, Insung; Ignatiev, Alex; Hwang, Hyunsang

Description

Resistive switching characteristics of thermally oxidized tungsten thin films and their switching mechanism were investigated, modifying thickness of the active layer (WOx) by varying oxidation conditions. Two types of switching were observed in Pt/WOx/W

CollectionsANU Research Publications
Date published: 2011
Type: Journal article
URI: http://hdl.handle.net/1885/65561
Source: Journal of Applied Physics
DOI: 10.1063/1.3633227

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