Resistive switching characteristics and mechanism of thermally grown WOx thin films
Resistive switching characteristics of thermally oxidized tungsten thin films and their switching mechanism were investigated, modifying thickness of the active layer (WOx) by varying oxidation conditions. Two types of switching were observed in Pt/WOx/W
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Biju_Resistive_switching_2011.pdf||1.74 MB||Adobe PDF|
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