Jung, Seungjae; Siddik, Manzar; Lee, Wootae; Park, Jubong; Liu, Xinjun; Woo, Jiyong; Choi, Godeuni; Lee, Joonmyoung; Lee, Nodo; Jang, Yun Hee; Hwang, Hyunsang
We proposed for the first time thermally-assisted resistive switching random access memory (ReRAM) device to overcome the voltage-time dilemma  using Ti/Pr0.7Ca0.3MnO3 (Ti/PCMO) with Ge2Sb2Te5 (GST) thermoelectric heater as well as thermal barrier (Fig. 1). "Thermoelectric heating effect" from GST/Ti junction  and "thermal barrier effect" from the heat confinement by GST and PCMO thermal insulators [3,4] successfully improved switching speed while "large effective Schottky barrier (SB)...[Show more]
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