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Thermally-assisted Ti/Pr0.7Ca0.3MnO3 ReRAM with excellent switching speed and retention characteristics

Jung, Seungjae; Siddik, Manzar; Lee, Wootae; Park, Jubong; Liu, Xinjun; Woo, Jiyong; Choi, Godeuni; Lee, Joonmyoung; Lee, Nodo; Jang, Yun Hee; Hwang, Hyunsang

Description

We proposed for the first time thermally-assisted resistive switching random access memory (ReRAM) device to overcome the voltage-time dilemma [1] using Ti/Pr0.7Ca0.3MnO3 (Ti/PCMO) with Ge2Sb2Te5 (GST) thermoelectric heater as well as thermal barrier (Fig. 1). "Thermoelectric heating effect" from GST/Ti junction [2] and "thermal barrier effect" from the heat confinement by GST and PCMO thermal insulators [3,4] successfully improved switching speed while "large effective Schottky barrier (SB)...[Show more]

CollectionsANU Research Publications
Date published: 2011
Type: Conference paper
URI: http://hdl.handle.net/1885/65933
Source: Technical Digest - International Electron Devices Meeting, IEDM
DOI: 10.1109/IEDM.2011.6131483

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