Thermally-assisted Ti/Pr0.7Ca0.3MnO3 ReRAM with excellent switching speed and retention characteristics
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Jung, Seungjae; Siddik, Manzar; Lee, Wootae; Park, Jubong; Liu, Xinjun; Woo, Jiyong; Choi, Godeuni; Lee, Joonmyoung; Lee, Nodo; Jang, Yun Hee; Hwang, Hyunsang
Description
We proposed for the first time thermally-assisted resistive switching random access memory (ReRAM) device to overcome the voltage-time dilemma [1] using Ti/Pr0.7Ca0.3MnO3 (Ti/PCMO) with Ge2Sb2Te5 (GST) thermoelectric heater as well as thermal barrier (Fig. 1). "Thermoelectric heating effect" from GST/Ti junction [2] and "thermal barrier effect" from the heat confinement by GST and PCMO thermal insulators [3,4] successfully improved switching speed while "large effective Schottky barrier (SB)...[Show more]
Collections | ANU Research Publications |
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Date published: | 2011 |
Type: | Conference paper |
URI: | http://hdl.handle.net/1885/65933 |
Source: | Technical Digest - International Electron Devices Meeting, IEDM |
DOI: | 10.1109/IEDM.2011.6131483 |
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