Thermally-assisted Ti/Pr0.7Ca0.3MnO3 ReRAM with excellent switching speed and retention characteristics
We proposed for the first time thermally-assisted resistive switching random access memory (ReRAM) device to overcome the voltage-time dilemma  using Ti/Pr0.7Ca0.3MnO3 (Ti/PCMO) with Ge2Sb2Te5 (GST) thermoelectric heater as well as thermal barrier (Fig. 1). "Thermoelectric heating effect" from GST/Ti junction  and "thermal barrier effect" from the heat confinement by GST and PCMO thermal insulators [3,4] successfully improved switching speed while "large effective Schottky barrier (SB)...[Show more]
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|Source:||Technical Digest - International Electron Devices Meeting, IEDM|
|01_Jung_Thermally-assisted_2011.pdf||807.59 kB||Adobe PDF||Request a copy|
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