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Improved resistive switching properties of solution processed ti O 2 thin films

Biju, Kuyyadi P.; Liu, Xinjun; Bourim, El Mostafa; Kim, Insung; Jung, Seungjae; Park, Jubong; Hwang, Hyunsang

Description

Resistive switching characteristics of low temperature sol-gel processed (250°C) Ti O2 thin films are investigated. The Pt/TiO 2/Pt device exhibits bipolar switching with a uniform high resistance state compared to the low resistance state. Reliability a

CollectionsANU Research Publications
Date published: 2010
Type: Journal article
URI: http://hdl.handle.net/1885/65599
Source: Electrochemical and Solid-State Letters
DOI: 10.1149/1.3494433

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