Improved resistive switching properties of solution processed ti O 2 thin films
Resistive switching characteristics of low temperature sol-gel processed (250°C) Ti O2 thin films are investigated. The Pt/TiO 2/Pt device exhibits bipolar switching with a uniform high resistance state compared to the low resistance state. Reliability a
|Collections||ANU Research Publications|
|Source:||Electrochemical and Solid-State Letters|
|01_Biju_Improved_resistive_switching_2010.pdf||608.42 kB||Adobe PDF||Request a copy|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.