Ferroelectric polarization effect on Al-Nb codoped Pb(Zr 0.52Ti0.48)O3/Pr0.7Ca0.3MnO3 heterostructure resistive memory
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Bourim, El Mostafa; Park, Sangsoo; Liu, Xinjun; Biju, Kuyyadi P.; Hwang, Hyunsang; Ignatiev, Alex
Description
This work presents the investigation of resistive switching memory in a perovskite heterostructure composed of an active Al-Nb codoped Pb(Zr0.52Ti0.48)O3 ferroelectric thin film and a semiconducting Pr0.7Ca0.3MnO3 manganite-based oxide film, both sandwiched between Pt electrodes in a parallel capacitor-like structure. Bipolar resistive switching nature was confirmed from the measured characteristics of the DC I-V hysteresis loop and resistance switching in the pulse mode. The active...[Show more]
Collections | ANU Research Publications |
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Date published: | 2011 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/65508 |
Source: | Electrochemical and Solid-State Letters |
DOI: | 10.1149/1.3556977 |
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01_Bourim_Ferroelectric_polarization_2011.pdf | 1.33 MB | Adobe PDF | Request a copy |
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