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Ferroelectric polarization effect on Al-Nb codoped Pb(Zr 0.52Ti0.48)O3/Pr0.7Ca0.3MnO3 heterostructure resistive memory

Bourim, El Mostafa; Park, Sangsoo; Liu, Xinjun; Biju, Kuyyadi P.; Hwang, Hyunsang; Ignatiev, Alex

Description

This work presents the investigation of resistive switching memory in a perovskite heterostructure composed of an active Al-Nb codoped Pb(Zr0.52Ti0.48)O3 ferroelectric thin film and a semiconducting Pr0.7Ca0.3MnO3 manganite-based oxide film, both sandwiched between Pt electrodes in a parallel capacitor-like structure. Bipolar resistive switching nature was confirmed from the measured characteristics of the DC I-V hysteresis loop and resistance switching in the pulse mode. The active...[Show more]

CollectionsANU Research Publications
Date published: 2011
Type: Journal article
URI: http://hdl.handle.net/1885/65508
Source: Electrochemical and Solid-State Letters
DOI: 10.1149/1.3556977

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