Skip navigation
Skip navigation

Browsing by Author 4943e946-b9bb-4b1f-87cd-1c594b05150c

Or enter first few letters:  
Showing results 87 to 106 of 533

Effect of a High Density of Stacking Faults on the Young's Modulus of GaAs Nanowires

Author(s)Chen, Yujie; Burgess, Timothy; An, Xianghai, et al
TypeJournal article
Date Published2016
Date Created-

Effect of active region position in Fabry-Perot single transverse mode broad-waveguide InGaAsP/InP lasers

Author(s)Lysevych, M; Tan, Hark Hoe; Karouta, F, et al
TypeJournal article
Date Published7-Apr-2014
Date Created-

Effect of Auger Recombination on the Performance of p-doped Quantum Dot Lasers

Author(s)Mokkapati, Sudha; Buda, Manuela; Jagadish, Chennupati, et al
TypeJournal article
Date Published2006
Date Created-
01_Fu_Effect_of_GaP_strain_2007.pdf.jpg

Effect of GaP strain compensation layers on rapid thermally annealed InGaAs∕GaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition

Author(s)Fu, Lan; McKerracher, I.; Jagadish, C., et al
TypeJournal article
Date Published15-Aug-2007
Date Created-

Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD

Author(s)Guo, YaNan; Zou, Jin; Joyce, Hannah J, et al
TypeConference paper
Date Published2010
Date CreatedDecember 12-15 2010

Effect of ion-implantation enhanced intermixing on luminescence of InAs/InP quantum dots

Author(s)Li, Qing; Barik, Satyanarayan; Jagadish, Chennupati, et al
TypeJournal article
Date Published2008
Date Created-
01_Lei_Effect_of_matrix_material_on_2009.pdf.jpg

Effect of matrix material on the morphology and optical properties of InP-based InAsSb nanostructures

Author(s)Lei, W.; Jagadish, C.; Tan, Hark Hoe
TypeJournal article
Date Published2009
Date Created-

Effect of plasmonic nanoparticles on the quantum efficiency of lll-V semiconductor nanorwire emitters

Author(s)Mokkapati, Sudha; Saxena, Dhruv; Gao, Qiang, et al
TypeConference paper
Date Published2012
Date CreatedDecember 12-14 2012

Effect of Rapid Thermal Annealing on the Atomic Intermixing of Zn- and C-Doped InGaAs/AlGaAs Quantum Well Laser Structures

Author(s)Gareso, Paulus; Buda, Manuela; Petravic, Mladen, et al
TypeJournal article
Date Published2006
Date Created-

Effect of the crystal structure on the optical properties of InP nanowires

Author(s)Paiman, Suriati; Gao, Qiang; Jagadish, Chennupati, et al
TypeConference paper
Date Published2009
Date CreatedOctober 4-8 2009

Effects of a p-n junction on heterojunction far infrared detectors

Author(s)Matsik, S G; Rinzan, MBM; Perera, AGU, et al
TypeJournal article
Date Published2007
Date Created-
01_Xu_Effects_of_annealing_and_2009.pdf.jpg

Effects of annealing and substrate orientation on epitaxial growth of GaAs on Si

Author(s)Xu, H. Y.; Guo, Y. N.; Wang, Y., et al
TypeJournal article
Date Published23-Oct-2009
Date Created-

Effects of annealing on the properties of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors

Author(s)Jolley, Greg; Xiao, B; Fu, Lan, et al
TypeJournal article
Date Published2009
Date Created-

Effects of annealing on the spectral response and dark current of quantum dot infrared photodetectors

Author(s)Jolley, Greg; Fu, Lan; Jagadish, Chennupati, et al
TypeJournal article
Date Published2008
Date Created-

Effects of growth rate on InP nanowires morphology and crystal structure

Author(s)Paiman, Suriati; Gao, Qiang; Jagadish, Chennupati, et al
TypeJournal article
Date Published2013
Date Created-
01_Fu_Effects_of_rapid_thermal_2006.pdf.jpg

Effects of rapid thermal annealing on device characteristics of InGaAs∕GaAs quantum dot infrared photodetectors

Author(s)Fu, Lan; McKerracher, I.; Wong-Leung, J., et al
TypeJournal article
Date Published13-Jun-2006
Date Created-

Effects of Thermal Stress on Interdiffusion in InGaAsN/GaAs Quantum Dots

Author(s)Gao, Qiang; Fu, Lan; Jagadish, Chennupati, et al
TypeJournal article
Date Published2004
Date Created-
01_Jolley_Effects_of_well_thickness_on_2008.pdf.jpg

Effects of well thickness on the spectral properties of In₀.₅Ga₀.₅As/GaAs/Al₀.₂Ga₀.₈As quantum dots-in-a-well infrared photodetectors

Author(s)Jolley, G; Fu, Lan; Jagadish, C., et al
TypeJournal article
Date Published14-May-2008
Date Created-

Effects of Zn Doping on Intermixing in InGaAs/AlGaAs Laser Diode Structures

Author(s)Buda, Manuela; Hay, J; Fu, Lan, et al
TypeJournal article
Date Published2003
Date Created-
APA4486.pdf.jpg

Electrical characterization impurity-disordering induced defects in n-GaAs using native oxide layers

Author(s)Deenapanray, P.N.K; Jagadish, Chennupati; Tan, Hark Hoe
TypeJournal article
Date Published2002
Date Created2002

Updated:  12 April 2016/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator