Lei, W.; Tan, H. H.; Jagadish, C.
This paper presents a study on the effect of matrix material on the morphology and optical properties of self-assembled InP-based InAsSbnanostructures. Due to the differences in surface roughness of the growth front, In 0.53 Ga 0.47 As matrix layer induces the formation of short quantum dashes (QDashes) and elongated quantum dots, while InP and In 0.52 Al 0.48 As matrix layers promote the formation of long QDashes and quantum wires, respectively. The shape anisotropy of InAsSbnanostructures...[Show more]
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