Effect of Rapid Thermal Annealing on the Atomic Intermixing of Zn- and C-Doped InGaAs/AlGaAs Quantum Well Laser Structures
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Gareso, Paulus; Buda, Manuela; Petravic, Mladen; Jagadish, Chennupati; Tan, Hark Hoe
Description
We have studied the effect of annealing on the atomic intermixing of Zn- and C-doped InGaAs/AlGaAs laser structures. Electrochemical capacitance voltage measurements revealed that the carrier concentration in the Zn-doped GaAs contact layers decreased after annealing at 900°C for 60 s. indicating that some of the Zn acceptors were passivated or outdiffused from the surface, whereas in the C-doped samples there was an increase of the camer concentration after annealing. This latter was confirmed...[Show more]
Collections | ANU Research Publications |
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Date published: | 2006 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/70541 |
Source: | Journal of the Electrochemical Society |
DOI: | 10.1149/1.2220066 |
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