Effect of Rapid Thermal Annealing on the Atomic Intermixing of Zn- and C-Doped InGaAs/AlGaAs Quantum Well Laser Structures
We have studied the effect of annealing on the atomic intermixing of Zn- and C-doped InGaAs/AlGaAs laser structures. Electrochemical capacitance voltage measurements revealed that the carrier concentration in the Zn-doped GaAs contact layers decreased after annealing at 900°C for 60 s. indicating that some of the Zn acceptors were passivated or outdiffused from the surface, whereas in the C-doped samples there was an increase of the camer concentration after annealing. This latter was confirmed...[Show more]
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|Source:||Journal of the Electrochemical Society|
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