Effect of Sn Addition on Epitaxial GaAs Nanowire Grown at Different Temperatures in Metal-Organic Chemical Vapor Deposition
In this study, we investigated the growth behaviors of GaAs nanowires with tetraethyl-tin (Sn) as addition grown at different temperatures in a metal−organic chemical vapor deposition system. It was found that the nanowire axial growth rate can be influenced by the addition of Sn in opposite ways at different growth temperatures. The growth rate of nanowires is higher because of the enhanced decomposition of trimethyl gallium (TMGa) with increasing the Sn addition at 390 °C while lower...[Show more]
|Collections||ANU Research Publications|
|Source:||Crystal Growth & Design|
|01_Gao_Effect_of_Sn_Addition_on_2019.pdf||5.21 MB||Adobe PDF|
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