Effects of a p-n junction on heterojunction far infrared detectors
HEterojunction Interfacial Workfunction Internal Photoemission (HEIWIP) far infrared detectors based on the GaAs/AlGaAs material system have shown promise for operation at wavelengths up to a few hundred microns. HEIWIP detectors with GaAs emitters have been shown to operate out to 92 μm. Recent modifications to use AlGaAs emitters have extended the zero response threshold out to 128 μm. Extension to longer wavelengths will require reducing the dark current in the devices. An approach using the...[Show more]
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