Skip navigation
Skip navigation

Effects of a p-n junction on heterojunction far infrared detectors

Matsik, S G; Rinzan, MBM; Perera, AGU; Jagadish, Chennupati; Liu, H. C.; Tan, Hark Hoe

Description

HEterojunction Interfacial Workfunction Internal Photoemission (HEIWIP) far infrared detectors based on the GaAs/AlGaAs material system have shown promise for operation at wavelengths up to a few hundred microns. HEIWIP detectors with GaAs emitters have been shown to operate out to 92 μm. Recent modifications to use AlGaAs emitters have extended the zero response threshold out to 128 μm. Extension to longer wavelengths will require reducing the dark current in the devices. An approach using the...[Show more]

CollectionsANU Research Publications
Date published: 2007
Type: Journal article
URI: http://hdl.handle.net/1885/20713
Source: Infrared Physics and Technology
DOI: 10.1016/j.infrared.2006.10.010

Download

File Description SizeFormat Image
01_Matsik_Effects_of_a_p-n_junction_on_2007.pdf242.46 kBAdobe PDF    Request a copy


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  12 November 2018/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator