Effect of ion-implantation enhanced intermixing on luminescence of InAs/InP quantum dots
Temperature dependent photoluminescence spectra of ion implanted InAs/InP quantum dots (QDs) followed by rapid thermal annealing were studied. By employing a recently developed luminescence model for localized states ensemble, the broadening of the distribution of the localized QD states was determined from the fitting to the luminescence peak energy positions. The broadening of the distribution of the localized QD states reduces due to ion-implantation enhanced intermixing. The contribution of...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Physics D: Applied Physics|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.