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Effects of annealing on the properties of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors

Jolley, Greg; Xiao, B; Fu, Lan; Tan, Hoe Hark; Jagadish, Chennupati

Description

We report on the device parameters of In0.5Ga 0.5As/GaAs/Al0.2Ga0.8As quantum-dots- in-a-well infrared photodetectors annealed at various temperatures from 700 to 850 °C. The temperature dependent dark current-voltage characteristics are found to have a

CollectionsANU Research Publications
Date published: 2009
Type: Journal article
URI: http://hdl.handle.net/1885/39593
Source: Journal of Physics D: Applied Physics
DOI: 10.1088/0022-3727/42/11/115103

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