Effects of annealing on the properties of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors
Date
2009
Authors
Jolley, Greg
Xiao, B
Fu, Lan
Jagadish, Chennupati
Tan, Hark Hoe
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Institute of Physics Publishing
Abstract
We report on the device parameters of In0.5Ga 0.5As/GaAs/Al0.2Ga0.8As quantum-dots- in-a-well infrared photodetectors annealed at various temperatures from 700 to 850 °C. The temperature dependent dark current-voltage characteristics are found to have a
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Journal of Physics D: Applied Physics
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Journal article
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2037-12-31
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