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Effects of annealing and substrate orientation on epitaxial growth of GaAs on Si

Xu, H. Y.; Guo, Y. N.; Wang, Y.; Zou, J.; Kang, J. H.; Gao, Q.; Tan, H. H.; Jagadish, C.

Description

GaAsthin filmsgrown on Si (100) and (111) substrates by metal-organic chemical vapor deposition were investigated by electron microscopy. It was found that the growth rate of the GaAsepitaxial layers on Si (100) was faster than that on Si (111) due to a lower Si (111) surface energy. The morphologies and internal crystal structure quality of GaAsfilmsgrown on Si (111) were better than those grown on Si (100). It was also found that postannealing at high temperature can improve the morphology of...[Show more]

CollectionsANU Research Publications
Date published: 2009-10-23
Type: Journal article
URI: http://hdl.handle.net/1885/16060
Source: Journal of Applied Physics
DOI: 10.1063/1.3248372

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