Effects of annealing and substrate orientation on epitaxial growth of GaAs on Si
GaAsthin filmsgrown on Si (100) and (111) substrates by metal-organic chemical vapor deposition were investigated by electron microscopy. It was found that the growth rate of the GaAsepitaxial layers on Si (100) was faster than that on Si (111) due to a lower Si (111) surface energy. The morphologies and internal crystal structure quality of GaAsfilmsgrown on Si (111) were better than those grown on Si (100). It was also found that postannealing at high temperature can improve the morphology of...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Xu_Effects_of_annealing_and_2009.pdf||Published Version||609.37 kB||Adobe PDF|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.