Effect of GaP strain compensation layers on rapid thermally annealed InGaAs∕GaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition
The effect of GaP strain compensation layers was investigated on ten-layer InGaAs∕GaAsquantum dot infrared photodetectors(QDIPs) grown by metal-organic chemical-vapor deposition. Compared with the normal QDIP structure, the insertion of GaP has led to a narrowed spectral linewidth and slightly improved detector performance. A more significant influence of GaP was observed after the structure was annealed at various temperatures. While a similar amount of wavelength tuning was obtained, the...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Fu_Effect_of_GaP_strain_2007.pdf||Published Version||364.31 kB||Adobe PDF|
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