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Effect of GaP strain compensation layers on rapid thermally annealed InGaAs∕GaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition

Fu, L.; McKerracher, I.; Tan, H. H.; Jagadish, C.; Vukmirović, N.; Harrison, P.


The effect of GaP strain compensation layers was investigated on ten-layer InGaAs∕GaAsquantum dot infrared photodetectors(QDIPs) grown by metal-organic chemical-vapor deposition. Compared with the normal QDIP structure, the insertion of GaP has led to a narrowed spectral linewidth and slightly improved detector performance. A more significant influence of GaP was observed after the structure was annealed at various temperatures. While a similar amount of wavelength tuning was obtained, the...[Show more]

CollectionsANU Research Publications
Date published: 2007-08-15
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.2770765


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