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Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD

Guo, YaNan; Zou, Jin; Joyce, Hannah J; Gao, Qiang; Tan, Hoe Hark; Jagadish, Chennupati

Description

The sidewall facets of GaAs nanowires (NWs) were studied. It has been found that the sidewalls of GaAs NWs grown at 450 °C are {112} facets. However, the sidewalls of GaAs NWs start to become {110} during the postannealing at 650 °C for 30 min.

CollectionsANU Research Publications
Date published: 2010
Type: Conference paper
URI: http://hdl.handle.net/1885/83675
Source: Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
DOI: 10.1109/COMMAD.2010.5699774

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