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Browsing by Author Lee, Wootae

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Showing results 1 to 8 of 8
01_Siddik_Characterization_of_resistive_2011.pdf.jpg

Characterization of resistive switching states in W/Pr0.7Ca 0.3MnO3 for a submicron (f250 nm) via-hole structure

Author(s)Siddik, Manzar; Biju, Kuyyadi P.; Liu, Xinjun, et al
TypeJournal article
Date Published2011
Date Created-
01_Liu_Co-occurrence_of_threshold_2012.pdf.jpg

Co-occurrence of threshold switching and memory switching in Pt/NbOx/Pt cells for crosspoint memory applications

Author(s)Liu, Xinjun; Sadaf, Sharif Md.; Son, Myungwoo, et al
TypeJournal article
Date Published2012
Date Created-

Filament-type resistive switching in homogeneous Bi-layer Pr0.7Ca0.3MnO3 thin film memory devices

Author(s)Liu, Xinjun; Biju, Kuyyadi P.; Bourim, El Mostafa, et al
TypeJournal article
Date Published2011
Date Created-

Low programming voltage resistive switching in reactive metal/polycrystalline Pr0.7Ca0.3MnO3 devices

Author(s)Liu, Xinjun; Biju, Kuyyadi P.; Bourim, El Mostafa, et al
TypeJournal article
Date Published2010
Date Created-

Memristive switching behavior in Pr0.7Ca0.3MnO3 by incorporating an oxygen-deficient layer

Author(s)Park, Sangsu; Jung, Seungjae; Siddik, Manzar, et al
TypeJournal article
Date Published2011
Date Created-

Self-selective characteristics of nanoscale VOx devices for high-density ReRAM applications

Author(s)Son, Myungwoo; Liu, Xinjun; Sadaf, Sharif Md., et al
TypeJournal article
Date Published2012
Date Created-

Thermally-assisted Ti/Pr0.7Ca0.3MnO3 ReRAM with excellent switching speed and retention characteristics

Author(s)Jung, Seungjae; Siddik, Manzar; Lee, Wootae, et al
TypeConference paper
Date Published2011
Date CreatedDecember 5-7 2011

Ultrathin (<10nm) Nb 2O 5/NbO 2 hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications

Author(s)Kim, Seonghyun; Liu, Xinjun; Park, Jubong, et al
TypeConference paper
Date Published2012
Date CreatedJune 12-14 2012
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