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Ultrathin (<10nm) Nb 2O 5/NbO 2 hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications

Kim, Seonghyun; Liu, Xinjun; Park, Jubong; Jung, Seungjae; Lee, Wootae; Woo, Jiyong; Shin, Jungho; Choi, Godeuni; Cho, Chumhum; Park, Sangsu; Lee, Daeseok; Cha, Euijun; Lee, Byoung-Hun; Lee, Hyung Dong; Kim, Soo Gil; Chung, Suock; Hwang, Hyunsang

Description

We report, for the first time, the novel concept of ultrathin (∼10nm) W/NbO x/Pt device with both threshold switching (TS) and memory switching (MS) characteristics. Excellent TS characteristics of NbO 2, such as high temperature stability (∼160°C),

CollectionsANU Research Publications
Date published: 2012
Type: Conference paper
URI: http://hdl.handle.net/1885/65893
Source: Digest of Technical Papers - Symposium on VLSI Technology
DOI: 10.1109/VLSIT.2012.6242508

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