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Co-occurrence of threshold switching and memory switching in Pt/NbOx/Pt cells for crosspoint memory applications

Liu, Xinjun; Sadaf, Sharif Md.; Son, Myungwoo; Park, Jubong; Shin, Jungho; Lee, Wootae; Seo, Kyungah; Lee, Daeseok; Hwang, Hyunsang

Description

To integrate bipolar resistive switching cells into crosspoint structures, we serially connect a threshold-switching (TS) Pt/NbO2/Pt device with a memory-switching (MS) Pt/Nb2O5/Pt device and observe the suppression of the undesired sneak current. A simpler Pt/Nb2O5/NbO2/Pt bilayer oxide device was designed; it simultaneously exhibits TS and MS. The unique device characteristics in the metal/oxide/metal structure can be directly integrated into a crosspoint memory array without the diode; this...[Show more]

CollectionsANU Research Publications
Date published: 2012
Type: Journal article
URI: http://hdl.handle.net/1885/65440
Source: IEEE Electron Device Letters
DOI: 10.1109/LED.2011.2174452

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