Skip navigation
Skip navigation

Co-occurrence of threshold switching and memory switching in Pt/NbOx/Pt cells for crosspoint memory applications

Liu, Xinjun; Sadaf, Sharif Md.; Son, Myungwoo; Park, Jubong; Shin, Jungho; Lee, Wootae; Seo, Kyungah; Lee, Daeseok; Hwang, Hyunsang


To integrate bipolar resistive switching cells into crosspoint structures, we serially connect a threshold-switching (TS) Pt/NbO2/Pt device with a memory-switching (MS) Pt/Nb2O5/Pt device and observe the suppression of the undesired sneak current. A simpler Pt/Nb2O5/NbO2/Pt bilayer oxide device was designed; it simultaneously exhibits TS and MS. The unique device characteristics in the metal/oxide/metal structure can be directly integrated into a crosspoint memory array without the diode; this...[Show more]

CollectionsANU Research Publications
Date published: 2012
Type: Journal article
Source: IEEE Electron Device Letters
DOI: 10.1109/LED.2011.2174452


File Description SizeFormat Image
01_Liu_Co-occurrence_of_threshold_2012.pdf434.13 kBAdobe PDFThumbnail

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator