Co-occurrence of threshold switching and memory switching in Pt/NbOx/Pt cells for crosspoint memory applications
To integrate bipolar resistive switching cells into crosspoint structures, we serially connect a threshold-switching (TS) Pt/NbO2/Pt device with a memory-switching (MS) Pt/Nb2O5/Pt device and observe the suppression of the undesired sneak current. A simpler Pt/Nb2O5/NbO2/Pt bilayer oxide device was designed; it simultaneously exhibits TS and MS. The unique device characteristics in the metal/oxide/metal structure can be directly integrated into a crosspoint memory array without the diode; this...[Show more]
|Collections||ANU Research Publications|
|Source:||IEEE Electron Device Letters|
|01_Liu_Co-occurrence_of_threshold_2012.pdf||434.13 kB||Adobe PDF|
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