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Characterization of resistive switching states in W/Pr0.7Ca 0.3MnO3 for a submicron (f250 nm) via-hole structure

Siddik, Manzar; Biju, Kuyyadi P.; Liu, Xinjun; Lee, Joonmyoung; Kim, Insung; Kim, Seonghyun; Lee, Wootae; Jung, Seungjae; Lee, Daeseok; Sadaf, Sharif Md.; Hwang, Hyunsang

Description

Analysis of asymmetric current-voltage (I-V) of low resistance state (LRS) and high resistance state (HRS) in a W/Pr0.7Ca0.3MnO3 (PCMO) submicron (φ250 nm) resistive memory device revealed the formation of a Schottky-like contact in both states. Raman sp

CollectionsANU Research Publications
Date published: 2011
Type: Journal article
URI: http://hdl.handle.net/1885/65569
Source: Japanese Journal of Applied Physics
DOI: 10.1143/JJAP.50.105802

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