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Browsing by Author Rougieux, F. E.

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Showing results 1 to 8 of 8

01_Lim_Boron-oxygen_defect_imaging_in_2013.pdf.jpg

Boron-oxygen defect imaging in p-type Czochralski silicon

Author(s)	Lim, S. Y.; Rougieux, F. E.; Macdonald, D.
Type	Journal article
Date Published	27-Aug-2013
Date Created	-

01_Forster_Boron-oxygen_defect_in_2012.pdf.jpg

Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron

Author(s)	Forster, M.; Fourmond, E.; Rougieux, F. E., et al
Type	Journal article
Date Published	27-Jan-2012
Date Created	-

01_Rougieux_Electron_and_hole_mobility_2010.pdf.jpg

Electron and hole mobility reduction and Hall factor in phosphorus-compensated p-type silicon

Author(s)	Rougieux, F. E.; Macdonald, D.; Cuevas, A., et al
Type	Journal article
Date Published	7-Jul-2010
Date Created	-

Grant et al Grown-in Defects Limiting the Bulk Lifetime 2015.pdf.jpg

Grown-in defects limiting the bulk lifetime of p-type float-zone silicon wafers

Author(s)	Grant, N. E.; Rougieux, F. E.; Macdonald, D., et al
Type	Journal article
Date Published	6-Feb-2015
Date Created	-

01_Forster_Impact_of_incomplete_2012.pdf.jpg

Impact of incomplete ionization of dopants on the electrical properties of compensated p-type silicon

Author(s)	Forster, M.; Cuevas, A.; Fourmond, E., et al
Type	Journal article
Date Published	17-Feb-2012
Date Created	-

01_Rougieux_Influence_of_net_doping,_2011.pdf.jpg

Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon

Author(s)	Rougieux, F. E.; Lim, B.; Schmidt, J., et al
Type	Journal article
Date Published	2011
Date Created	-

01_Rougieux_Reading_data_stored_in_the_2014.pdf.jpg

Reading data stored in the state of metastable defects in silicon using band-band photoluminescence: Proof of concept and physical limits to the data storage density

Author(s)	Rougieux, F. E.; Macdonald, D.
Type	Journal article
Date Published	28-Mar-2014
Date Created	-

01_Zheng_Upgraded_Metallurgical-grade_Silicon_2016.pdf.jpg

Upgraded metallurgical-grade silicon solar cells with efficiency above 20%

Author(s)	Zheng, P.; Rougieux, F. E.; Samundsett, C., et al
Type	Journal article
Date Published	22-Mar-2016
Date Created	-

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