Rougieux, F. E.; Macdonald, D.; Cuevas, A.; Ruffell, S.; Schmidt, J.; Lim, B.; Knights, A. P.
The conductivity mobility for majority carrier holes in compensated p-type silicon is determined by combined measurement of the resistivity and the net doping, the latter via electrochemical capacitance-voltage measurements. The minority electron mobility was also measured with a technique based on measurements of surface-limited effective carrier lifetimes. While both minority and majority carrier mobilities are found to be significantly reduced by compensation, the impact is greater on the...[Show more]
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.