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Electron and hole mobility reduction and Hall factor in phosphorus-compensated p-type silicon

Rougieux, F. E.; Macdonald, D.; Cuevas, A.; Ruffell, S.; Schmidt, J.; Lim, B.; Knights, A. P.

Description

The conductivity mobility for majority carrier holes in compensated p-type silicon is determined by combined measurement of the resistivity and the net doping, the latter via electrochemical capacitance-voltage measurements. The minority electron mobility was also measured with a technique based on measurements of surface-limited effective carrier lifetimes. While both minority and majority carrier mobilities are found to be significantly reduced by compensation, the impact is greater on the...[Show more]

CollectionsANU Research Publications
Date published: 2010-07-07
Type: Journal article
URI: http://hdl.handle.net/1885/70386
Source: Journal of Applied Physics
DOI: 10.1063/1.3456076

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