Electron and hole mobility reduction and Hall factor in phosphorus-compensated p-type silicon
The conductivity mobility for majority carrier holes in compensated p-type silicon is determined by combined measurement of the resistivity and the net doping, the latter via electrochemical capacitance-voltage measurements. The minority electron mobility was also measured with a technique based on measurements of surface-limited effective carrier lifetimes. While both minority and majority carrier mobilities are found to be significantly reduced by compensation, the impact is greater on the...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Rougieux_Electron_and_hole_mobility_2010.pdf||Published Version||288.7 kB||Adobe PDF|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.