Boron-oxygen defect imaging in p-type Czochralski silicon
In this work, we demonstrate an accurate method for determining the effective boron-oxygen (BO) related defect density on Czochralski-grown silicon wafers using photoluminescence imaging. Furthermore, by combining a recently developed dopant density imaging technique and microscopic Fourier transform infrared spectroscopy measurements of the local interstitial oxygen concentration [Oi ], the BO-related defect density, [Oi ], and the boron dopant density from the same wafer were determined, all...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Lim_Boron-oxygen_defect_imaging_in_2013.pdf||Published Version||1.62 MB||Adobe PDF|
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