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Boron-oxygen defect imaging in p-type Czochralski silicon

Lim, S. Y.; Rougieux, F. E.; Macdonald, D.

Description

In this work, we demonstrate an accurate method for determining the effective boron-oxygen (BO) related defect density on Czochralski-grown silicon wafers using photoluminescence imaging. Furthermore, by combining a recently developed dopant density imaging technique and microscopic Fourier transform infrared spectroscopy measurements of the local interstitial oxygen concentration [Oi ], the BO-related defect density, [Oi ], and the boron dopant density from the same wafer were determined, all...[Show more]

CollectionsANU Research Publications
Date published: 2013-08-27
Type: Journal article
URI: http://hdl.handle.net/1885/15646
Source: Applied Physics Letters
DOI: 10.1063/1.4819096

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