Rougieux, F. E.; Lim, B.; Schmidt, J.; Forster, M.; Macdonald, D.; Cuevas, A.
In this study, we present experimental data regarding the concentration of the boron-oxygen
complex in compensated n-type silicon when subjected to illumination. We find that the defect
density is independent of the net dopant concentration and is strongly dependent on the minority
carrier concentration during illumination. We show that annealing at temperatures in the range
500 C to 700 C permanently reduces the defect density possibly via a decrease in the oxygen
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