Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon
In this study, we present experimental data regarding the concentration of the boron-oxygen complex in compensated n-type silicon when subjected to illumination. We find that the defect density is independent of the net dopant concentration and is strongly dependent on the minority carrier concentration during illumination. We show that annealing at temperatures in the range 500 C to 700 C permanently reduces the defect density possibly via a decrease in the oxygen dimer concentration.
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Rougieux_Influence_of_net_doping,_2011.pdf||Published Version||1.11 MB||Adobe PDF|
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