Forster, M.; Cuevas, A.; Fourmond, E.; Rougieux, F. E.; Lemiti, M.
This paper investigates the importance of incomplete ionization of dopants in compensated p-type Si and its impact on the majority-carrier density and mobility and thus on the resistivity. Both theoretical calculations and temperature-dependent Hall-effect measurements demonstrate that the carrier density is more strongly affected by incomplete ionization in compensated Si than in uncompensated Si with the same net doping. The previously suggested existence of a compensation-specific scattering...[Show more]
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