Skip navigation
Skip navigation

Reading data stored in the state of metastable defects in silicon using band-band photoluminescence: Proof of concept and physical limits to the data storage density

Rougieux, F. E.; Macdonald, D.

Description

The state of bistable defects in crystalline silicon such as iron-boron pairs or the boron-oxygen defect can be changed at room temperature. In this letter, we experimentally demonstrate that the chemical state of a group of defects can be changed to represent a bit of information. The state can then be read without direct contact via the intensity of the emitted band-band photoluminescence signal of the group of defects, via their impact on the carrier lifetime. The theoretical limit of the...[Show more]

CollectionsANU Research Publications
Date published: 2014-03-28
Type: Journal article
URI: http://hdl.handle.net/1885/16041
Source: Applied Physics Letters
DOI: 10.1063/1.4870002

Download

File Description SizeFormat Image
01_Rougieux_Reading_data_stored_in_the_2014.pdfPublished Version660.2 kBAdobe PDFThumbnail


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  12 November 2018/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator