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Reading data stored in the state of metastable defects in silicon using band-band photoluminescence: Proof of concept and physical limits to the data storage density

Rougieux, F. E.; Macdonald, D.


The state of bistable defects in crystalline silicon such as iron-boron pairs or the boron-oxygen defect can be changed at room temperature. In this letter, we experimentally demonstrate that the chemical state of a group of defects can be changed to represent a bit of information. The state can then be read without direct contact via the intensity of the emitted band-band photoluminescence signal of the group of defects, via their impact on the carrier lifetime. The theoretical limit of the...[Show more]

CollectionsANU Research Publications
Date published: 2014-03-28
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.4870002


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