Forster, M.; Fourmond, E.; Rougieux, F. E.; Cuevas, A.; Gotoh, R.; Fujiwara, K.; Uda, S.; Lemiti, M.
We study the boron-oxygen defect in Si co-doped with gallium and boron with the hole density 10 times higher than the boron concentration. Instead of the linear dependence of the defect density on the hole density observed in boron and phosphorus compensated silicon, we find a proportionality to the boron concentration. This indicates the participation of substitutional, rather than interstitial,boron in the defect complex. The measured defectformationrate constant is proportional to the hole...[Show more]
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