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Grown-in defects limiting the bulk lifetime of p-type float-zone silicon wafers

Grant, N. E.; Rougieux, F. E.; Macdonald, D.; Bullock, James; Wan, Y.

Description

We investigate a recombination active grown-in defect limiting the bulk lifetime (τ bulk ) of high quality float-zone (FZ) p-type silicon wafers. After annealing the samples at temperatures between 80 °C and 400 °C, τ bulk was found to increase from ∼500 μs to ∼1.5 ms. By isochronal annealing the p-type samples between 80 °C and 400 °C for 30 min, the annihilation energy (Eann ) of the defect was determined to be 0.3 < Eann  < 0.7 eV. When the annihilated samples were phosphorus gettered at...[Show more]

CollectionsANU Research Publications
Date published: 2015-02-06
Type: Journal article
URI: http://hdl.handle.net/1885/13796
Source: Journal of Applied Physics
DOI: 10.1063/1.4907804

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