Grant, N. E.; Rougieux, F. E.; Macdonald, D.; Bullock, J.; Wan, Y.
We investigate a recombination active grown-in defect limiting the bulk lifetime (τ bulk ) of high quality float-zone (FZ) p-type silicon wafers. After annealing the samples at temperatures between 80 °C and 400 °C, τ bulk was found to increase from ∼500 μs to ∼1.5 ms. By isochronal annealing the p-type samples between 80 °C and 400 °C for 30 min, the annihilation energy (Eann ) of the defect was determined to be 0.3 < Eann < 0.7 eV. When the annihilated samples were phosphorus gettered at...[Show more]
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