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Showing results 460 to 479 of 533

Tailoring GaAs, InAs, and InGaAs Nanowires for Optoelectronic Device Applications

Author(s)Joyce, Hannah J; Gao, Qiang; Wong-Leung, Yin-Yin (Jennifer), et al
TypeJournal article
Date Published2011
Date Created-
_111__GaAs_manuscript.pdf.jpg

Tailoring Second-Harmonic Emission from (111)-GaAs Nanoantennas

Author(s)Sautter, Jurgen; Xu, Lei; Miroshnichenko, Andrey, et al
TypeJournal article
Date Published28-May-2019
Date Created-
acsenergylett.7b01153.pdf.jpg

Tantalum Oxide Electron-Selective Heterocontacts for Silicon Photovoltaics and Photoelectrochemical Water Reduction

Author(s)Wan, Yimao; Karuturi, Siva Krishna; Samundsett, Christian, et al
TypeJournal article
Date Published2017
Date Created-

Temperature Dependence of Dark Current Properties of InGaAs/GaAs Quantum Dot Solar Cells

Author(s)Lu, Hao Feng; Fu, Lan; Jolley, Greg, et al
TypeConference paper
Date Published2010
Date CreatedDecember 12-15 2010
01_Lu_Temperature_dependence_of_dark_2011.pdf.jpg

Temperature dependence of dark current properties of InGaAs/GaAs quantum dot solar cells

Author(s)Lu, Hao Feng; Fu, Lan; Jolley, Greg, et al
TypeJournal article
Date Published6-May-2011
Date Created-

Temperature dependence of interband transitions in wurtzite InP nanowires

Author(s)Zilli, Attilio; De Luca, M.; Tedeschi, Davide, et al
TypeJournal article
Date Published2015
Date Created-
01_Titova_Temperature_dependence_of_2006.pdf.jpg

Temperature dependence of photoluminescence from single core-shell GaAs–AlGaAs nanowires

Author(s)Titova, L. V.; Hoang, Thang B.; Jackson, H. E., et al
TypeJournal article
Date Published26-Oct-2006
Date Created-
01_Wen_Temperature_dependent_2007.pdf.jpg

Temperature dependent photoluminescence in oxygen ion implanted and rapid thermally annealed ZnO/ZnMgO multiple quantum wells

Author(s)Wen, Xiaoming; Davis, Jeffrey A.; Van Dao, Lap, et al
TypeJournal article
Date Published1-Jun-2007
Date Created-

Temperature effect on device characteristics of InGaAs/GaAs quantum dot solar cell

Author(s)Fu, Lan; Jolley, Greg; Lu, Hao Feng, et al
TypeConference paper
Date Published2010
Date CreatedDecember 12-15 2010

Temperature effects in contacts between a metal and a semiconductor nanowire near the degenerate doping

Author(s)Sun, Zhuting; Burgess, Timothy; Tan, Hark Hoe, et al
TypeJournal article
Date Published28-Feb-2018
Date Created-

Terahertz Emission and Lifetime Measurements of Ion-implanted Semiconductors: Experiment and Simulation

Author(s)Lloyd-Hughes, J; Castro-Camus, E; Fraser, Michael, et al
TypeConference paper
Date Published2006
Date CreatedMay 21-26 2006

The asymmetry in the characteristics of GaAs/AlGaAs quantum well infrared photodetectors

Author(s)Li, Na; Fu, Lan; Li, Ning, et al
TypeJournal article
Date Published2001
Date Created-
01_Jolley_The_conduction_band_absorption_2012.pdf.jpg

The conduction band absorption spectrum of interdiffused InGaAs/GaAs quantum dot infrared photodetectors

Author(s)Jolley, G; McKerracher, I; Fu, Lan, et al
TypeJournal article
Date Published26-Jun-2012
Date Created-

The effect of V/III ratio and catalyst particle size on the crystal structure and optical properties of InP nanowires

Author(s)Paiman, Suriati; Gao, Qiang; Jagadish, Chennupati, et al
TypeJournal article
Date Published2009
Date Created-

The Impact of AlGaAs Cladding Layers Grown at Low Temperature on the Performance of MOCVD based in InAs/GaAs Quantum Dot Laser Diodes

Author(s)Stewart Sears, Kalista; Buda, Manuela; Jagadish, Chennupati, et al
TypeConference paper
Date Published2005
Date CreatedOctober 23 2005

The influence of doping on the device characteristics of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors

Author(s)Jolley, Greg; Fu, Lan; Jagadish, Chennupati, et al
TypeJournal article
Date Published2010
Date Created-

The influence of InGaAs quantum dots on GaAs P-I-N solar cell dark current properties

Author(s)Jolley, Greg; Lu, Hao Feng; Fu, Lan, et al
TypeConference paper
Date Published2011
Date CreatedJune 19-24 2011

The Origin of Gate Hysteresis in p-type Si-doped AIGaAs/GaAs Heterostructures

Author(s)Carrad, D. J.; Burke, Anthony; Waddington, D. E. J., et al
TypeConference paper
Date Published2012
Date CreatedDecember 12-14 2012

The Role of Arsine in the Self-assembled Growth of InAs/GaAs Quantum Dots by Metal Organic Chemical Vapor Deposition

Author(s)Stewart Sears, Kalista; Wong-Leung, Yin-Yin (Jennifer); Jagadish, Chennupati, et al
TypeJournal article
Date Published2006
Date Created-

The role of intersubband optical transitions on the electrical properties of InGaAs/GaAs quantum dot solar cells

Author(s)Jolley, Greg; Fu, Lan; Lu, Hao Feng, et al
TypeJournal article
Date Published2012
Date Created-

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