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Taper-free and kinked germanium nanowires grown on silicon via purging and the two-temperature process

Kim, Jung Hyuk; Moon, So Ra; Kim, Yong; Chen, Zhi Gang; Zou, Jin; Choi, Duk-Yong; Joyce, Hannah J; Gao, Qiang; Jagadish, Chennupati; Tan, Hark Hoe

Description

We investigate the growth procedures for achieving taper-free and kinked germanium nanowires epitaxially grown on silicon substrates by chemical vapor deposition. Singly and multiply kinked germanium nanowires consisting of 111 segments were formed by employing a reactant gas purging process. Unlike non-epitaxial kinked nanowires, a two-temperature process is necessary to maintain the taper-free nature of segments in our kinked germanium nanowires on silicon. As an application, nanobridges...[Show more]

CollectionsANU Research Publications
Date published: 2012
Type: Journal article
URI: http://hdl.handle.net/1885/30146
Source: Nanotechnology
DOI: 10.1088/0957-4484/23/11/115603

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