Skip navigation
Skip navigation

Taper-free and kinked germanium nanowires grown on silicon via purging and the two-temperature process

Kim, Jung Hyuk; Moon, So Ra; Kim, Yong; Chen, Zhi Gang; Zou, Jin; Choi, Duk-Yong; Joyce, Hannah J; Gao, Qiang; Tan, Hoe Hark; Jagadish, Chennupati


We investigate the growth procedures for achieving taper-free and kinked germanium nanowires epitaxially grown on silicon substrates by chemical vapor deposition. Singly and multiply kinked germanium nanowires consisting of 111 segments were formed by employing a reactant gas purging process. Unlike non-epitaxial kinked nanowires, a two-temperature process is necessary to maintain the taper-free nature of segments in our kinked germanium nanowires on silicon. As an application, nanobridges...[Show more]

CollectionsANU Research Publications
Date published: 2012
Type: Journal article
Source: Nanotechnology
DOI: 10.1088/0957-4484/23/11/115603


File Description SizeFormat Image
01_Kim_Taper-free_and_kinked_2012.pdf1.05 MBAdobe PDF    Request a copy

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  20 July 2017/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator