Temperature Dependence of Dark Current Properties of InGaAs/GaAs Quantum Dot Solar Cells
Date
2010
Authors
Lu, Hao Feng
Fu, Lan
Jolley, Greg
Rao Tatavarti, Sudersena
Jagadish, Chennupati
Tan, Hark Hoe
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Institute of Electrical and Electronics Engineers (IEEE Inc)
Abstract
Performances of GaAs reference solar cells and 10-layer InGaAs/ GaAs quantum dot solar cells were tested using AM1.5 illumination with results indicate that quantum dot (QD) structures improve the photo-current density compared to reference devices. Systematic measurements of the dark current versus voltage (I-V) characteristics were also carried out as a function of temperatures from 30K to 310K. The QD solar cell (QDSC) displays a more rapid change of dark current with increasing temperature than reference cells. The dark current of QD cells was found to be greatly affected by carrier trapping and recombination by the presence of QDs.
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Keywords
Keywords: Carrier trapping; Current properties; GaAs; Quantum dot solar cells; Quantum dots; Rapid changes; Reference devices; Temperature dependence; Dark currents; Gallium alloys; Gallium arsenide; Microelectronics; Semiconducting gallium; Semiconductor quantum d
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2010 conference on Optoelectronic and Microelectronic Materials and Devices Proceedings
Type
Conference paper
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2037-12-31
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