Temperature Dependence of Dark Current Properties of InGaAs/GaAs Quantum Dot Solar Cells
Performances of GaAs reference solar cells and 10-layer InGaAs/ GaAs quantum dot solar cells were tested using AM1.5 illumination with results indicate that quantum dot (QD) structures improve the photo-current density compared to reference devices. Systematic measurements of the dark current versus voltage (I-V) characteristics were also carried out as a function of temperatures from 30K to 310K. The QD solar cell (QDSC) displays a more rapid change of dark current with increasing temperature...[Show more]
|Collections||ANU Research Publications|
|Source:||2010 conference on Optoelectronic and Microelectronic Materials and Devices Proceedings|
|01_Lu_Temperature_Dependence_of_Dark_2010.pdf||405.27 kB||Adobe PDF||Request a copy|
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