Kim, Jung Hyuk; Moon, So Ra; Yoon, Hyun Sik; Jung, Jae Hun; Kim, Yong; Chen, Zhi Gang; Zou, Jin; Choi, Duk-Yong; Joyce, Hannah J; Gao, Qiang; Tan, Hoe Hark; Jagadish, Chennupati
Taper-free and vertically oriented Ge nanowires were grown on Si (111) substrates by chemical vapor deposition with Au nanoparticle catalysts. To achieve vertical nanowire growth on the highly lattice mismatched Si substrate, a thin Ge buffer layer was first deposited, and to achieve taper-free nanowire growth, a two-temperature process was employed. The two-temperature process consisted of a brief initial base growth step at high temperature followed by prolonged growth at lower temperature....[Show more]
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