The conduction band absorption spectrum of interdiffused InGaAs/GaAs quantum dot infrared photodetectors

Abstract

We report on a theoretical study of the relationship between interdiffusion and the conduction bandoptical absorption of In(Ga)As/GaAs quantum dots.Quantum dot geometries are progressively interdiffused based on Fick’s model and the quantum dot strain, band structure and optical absorption cross-section are calculated numerically. Quantifying the effects of interdiffusion on quantum dotoptical absorption is important for applications that utilize post-growth techniques such as selective area intermixing.